发明名称 |
TRANSRFLECTIVE THIN FILM TRASISTER |
摘要 |
A transflective thin film transistor substrate is provided to widen reflective electrodes opposite to each other, having the data lines between the electrodes, to prevent an electric field between the adjacent reflective electrodes, thereby preventing afterimages. Thin film transistors are connected with gate lines and data lines. Pixel electrodes(400) are connected with the thin film transistors, formed on a pixel area. Reflective electrodes(420) are formed at a reflective area included in the pixel area. Interval distances of the pixel electrodes or the reflective electrodes are 3.5mum-6mum. The pixel electrodes or the reflective electrodes are opposite to each other as having the data lines between the electrodes. A light blocking film(330) is formed under the data lines, overlapped with the data lines and having width wider than the data lines. |
申请公布号 |
KR20080018606(A) |
申请公布日期 |
2008.02.28 |
申请号 |
KR20060080995 |
申请日期 |
2006.08.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HYUN YOUNG;JUNG, KWAN WOOK;NA, HYUNG DON;TAE, SEUNG GYU;KIM, JUNG YUN |
分类号 |
G02F1/1335 |
主分类号 |
G02F1/1335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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