| 摘要 |
A packaged RF power transistor comprises: an input lead; a DC gate bias lead; an RF power transistor including a gate terminal, a source terminal, and a drain terminal; and an input matching network. The input matching circuit network includes a primary inductor which is electrically connected to the RF input lead, a secondary inductor which is electrically connected to the gate terminal and the DC gate bias lead, and a tuning capacitor which is electrically connected to the RF input lead and is physically disconnected from the gate terminal. The input matching network blocks DC voltage between the RF lead and the gate terminal, and transmits AC voltage from the RF input lead to the gate terminal in a determined frequency range. The tuning capacitor is configured to tune capacitance of the input matching network on the basis of variation in the DC voltage applied to the RF input lead. |
