| 摘要 |
A chemical mechanical polishing slurry composition is provided to prevent a steep decline in a polishing rate while minimizing polishing defects such as dishing, corrosion, and scratch causable upon high-pressure polishing. The chemical mechanical polishing slurry composition consists of an oxidant, an inorganic acid, an organic acid, and an abrasive, and further an activator. The activator is added in an amount of 0.01-10wt% based on the total slurry composition. The activator is at least one selected from tetraacetylethylenediame, diacetin, acetic anhydride, and pentaacetylglucose. The oxidant is at least one peroxide compound selected from hydrogen peroxide, benzoyl peroxide, calcium peroxide, barium peroxide, and sodium peroxide.
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