发明名称 |
Semiconductor device with silicided source/drains |
摘要 |
In a semiconductor device, a relatively deep germanium implant and activation thereof precedes deposition of the nickel for nickel silicide formation. The activation of the germanium causes the lattice constant in the region of the implant to be increased over the lattice constant of the background substrate, which is preferably silicon. The effect is that the lattice so altered avoids formation of nickel disilicide. The result is that the nickel silicide spiking is avoided.
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申请公布号 |
US7262105(B2) |
申请公布日期 |
2007.08.28 |
申请号 |
US20030718892 |
申请日期 |
2003.11.21 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
JAWARANI DHARMESH;CAVE NIGEL G.;RENDON MICHAEL |
分类号 |
H01L21/336;H01L21/265;H01L21/425;H01L21/44 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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