SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS

摘要

Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a body region of semiconductor material having a first conductivity type, a source region of semiconductor material having a second conductivity type within the body region, a junction isolation region of semiconductor material having the second conductivity type, a drain region of semiconductor material having the second conductivity type, and first and second drift regions of semiconductor material having the second conductivity type. The first drift region resides laterally between the drain region and the junction isolation region, the junction isolation region resides laterally between the first drift region and the second drift region, and the second drift region resides laterally between the body region and the junction isolation region.

主权项

1. A method of fabricating a semiconductor device on a semiconductor substrate, the method comprising:
forming a body region of semiconductor material having a first conductivity type within the semiconductor substrate; forming a junction isolation region of semiconductor material having a second conductivity type opposite the first conductivity type within the semiconductor substrate, the junction isolation region residing laterally between the body region and a second region of semiconductor material having the first conductivity type; forming a first drift region of semiconductor material having the second conductivity type within the second region; forming a source region of semiconductor material having the second conductivity type within the body region; and forming a drain region of semiconductor material having the second conductivity type within the second region, wherein the first drift region resides laterally between the drain region and the junction isolation region to provide a conductive path between the drain region and the junction isolation region.