发明名称 |
Flash memory apparatus and initialization method for programming operation thereof |
摘要 |
A flash memory apparatus and an initialization method for programming operation thereof are provided. The initialization method includes: providing a plurality of increasing programming pulse voltages to operate a plurality of without program inhibit programming actions on memory cells of the flash memory, and operating a plurality of programming verification actions on the memory cells according to a programming verification voltage; obtaining a recorded programming voltage value according verified results of the programming verification actions; providing a plurality of increasing reading pulse voltages to operate a plurality of reading actions on the memory cells; obtaining a recorded reading voltage value according to read result of the reading actions; and obtaining an initial programming voltage and an incremental step programming pulse voltages according to the recorded programming voltage value, the recorded reading voltage value and a voltage value of the programming verification voltage. |
申请公布号 |
US9437311(B1) |
申请公布日期 |
2016.09.06 |
申请号 |
US201514841700 |
申请日期 |
2015.08.31 |
申请人 |
Powerchip Technology Corporation |
发明人 |
Teng Tsai-Ko |
分类号 |
G11C16/20;G11C16/26;G11C16/34;G11C29/56 |
主分类号 |
G11C16/20 |
代理机构 |
Jianq Chyun IP Office |
代理人 |
Jianq Chyun IP Office |
主权项 |
1. An initialization method for programming flash memory comprising:
providing a plurality of programming pulse voltages to operate a plurality of programming actions without inhibiting function on memory cells of the flash memory, wherein the voltage values of the programming pulse voltages are incremental; performing a programming verification action on the memory cells by using a programming verification voltage after each time of the programming actions, and recording a current one of voltage values of the programming pulse voltages corresponding to the programming actions with respect to the programming verification actions as a recorded programming voltage value, according to verified results of the programming verification actions; providing a plurality of reading pulse voltages after the programming actions to perform a plurality of reading actions on the memory cells, wherein voltages values of the reading pulse voltages are incremental; recording a current one of the voltage values of the reading pulse voltages as a recorded reading voltage value, according to reading results of the reading actions; and obtaining an initial programming voltage and a voltage increment of the programming pulse voltages according to the recorded programming voltage value, the recorded reading voltage value and a voltage value of the programming verification voltage. |
地址 |
Hsinchu TW |