| 发明名称 | Lithography process using directed self assembly | ||
| 摘要 | A method includes forming a patterned hard mask layer, with a trench formed in the patterned hard mask layer, dispensing a Bulk Co-Polymer (BCP) coating in the trench, wherein the BCP coating comprises a mix of a first material and a second material different from the first material. The method further includes treating the BCP coating with a chemical to form a first plurality of strips of the first material and a second plurality of strips of the second material, with the first plurality of strips and the second plurality of strips allocated in an alternating layout. The second plurality of strips is selectively etched, and the first plurality of strips is left in the trench. | ||
| 申请公布号 | US9405201(B2) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201414550207 | 申请日期 | 2014.11.21 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chang Yu-Sheng |
| 分类号 | B44C1/22;C03C15/00;C03C25/68;C23F1/00;G03F7/40;H01L21/027;H01L21/033;G03F7/00 | 主分类号 | B44C1/22 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A method comprising: forming a patterned hard mask layer, with a trench formed in the patterned hard mask layer; forming a neutralized layer in the trench, the neutralized layer being homogeneous; dispensing a Bulk Co-Polymer (BCP) coating in the trench, wherein the BCP coating comprises a mix of a first material and a second material different from the first material, and wherein the BCP coating is dispensed over the neutralized layer; treating the BCP coating with a chemical to form a first plurality of strips of the first material and a second plurality of strips of the second material, with the first plurality of strips and the second plurality of strips allocated in an alternating layout, the neutralized layer remaining homogeneous after treating the BCP coating with the chemical; and selectively etching the second plurality of strips, with the first plurality of strips left in the trench. | ||
| 地址 | Hsin-Chu TW | ||