Semiconductor memory device

摘要

A semiconductor memory device having memory cells in which a DRAM section and an EEPROM section are combined, and a transistor for transferring data between the DRAM and EEPROM sections is disclosed. The DRAM section includes a MOS transistor, and a capacitor one electrode of which is connected to the source of the MOS transistor. The EEPROM section has a floating gate transistor. The transistor for transfer is connected between the source of the MOS transistor and the source/drain of the floating gate transistor. The control gate of the floating gate transistor is connected to the source of the MOS transistor. Methods of rewriting and recalling data in the semiconductor memory device are also disclosed. The methods can be performed without shortening the life of the EEPROM section.