发明名称 |
Self-aligned pattern formation using dual wavelengths |
摘要 |
An integrated circuit fabrication process for patterning features at sub-lithographic dimensions is disclosed herein. The process includes sequentially exposing a of a film of arylalkoxysilane with a photobase generator, and catalytic amount of water coated on top of a conventional lipophilic photoresist layer provided over a substrate and exposed to a radiation at a first and a second lithographic wavelengths. The first lithographic wavelength is shorter than the second lithographic wavelength. Exposure to the first lithographic wavelength causes a self-aligned mask to form within the photoresist layer.
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申请公布号 |
US2003162135(A1) |
申请公布日期 |
2003.08.28 |
申请号 |
US20020083914 |
申请日期 |
2002.02.27 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
OKOROANYANWU UZODINMA;BOTTELLI ARMANDO C. |
分类号 |
G03F7/075;G03F7/095;G03F7/20;H01L21/027;(IPC1-7):G03F7/20;G03B27/00;G03F7/26 |
主分类号 |
G03F7/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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