| 摘要 |
PURPOSE:To make it possible to form a superconducting film of high quality without causing damage on a substrate below by forming a crystal structure showing superconductivity by performing a short time treatment on the substrate with laser, light or the like. CONSTITUTION:On a semiconductor substrate 10 on which a junction 11 of a source and a drain is formed, is formed a gate electrode 30. Further on an oxide film 20 is formed a hole for electrode contact. On them is deposited a film of Yb, Ba, Cu and O by electron beam evaporation process and heat- treated in O2 atmosphere with a lamp annealing furnace. Source and drain electrodes 41, 42 are then formed by treating the superconducting film 40 by photolithography and etching. If a laser beam is used in this pattern forming, the pattern forming of the film 40 can be made simultaneously with the annealing. This make it possible to form the superconducting film of high quality without causing damage to the substrate below. |
