SENSING CIRCUIT OF A MAGNETRORESISTIVE RANDOM ACCESS MEMORY AND SENSING METHOD IN THE SAME

摘要

A sensing circuit which secures an enough sensing margin, improves sensing yield, and is resistant to process spread, and a sensing method in the same. The sensing circuit includes a data detection part where a data voltage corresponding to a current flowing along a data cell is formed, a reference detection part which a reference voltage corresponding to a current flowing along a reference cell is formed, and a detection output part which compares the data voltage with the reference voltage and detects the data of the data cell. Here, the data voltage is applied to the reference detection part. Or, the reference voltage is applied to the data detection part.