| 摘要 |
PURPOSE: To stably form resist patterns having a good rectangular shape property and good dimensional accuracy on a semiconductor substrate having a difference in level. CONSTITUTION: A chemical amplification type resist 2 is applied on the semiconductor substrate 1 having the difference in level and a plane plate 6 having a basic compd. or water is brought into contact with the high part of the difference in level, by which a hardly soluble layer 7 is formed in the high part of the difference in level on the front surface of the chemical amplification type resist 2. As a result, the film thinning in the resist patterns in the high part of the difference in level does not arise even if exposure is executed by focusing at the bottom part of the difference in level. |
