| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-frequency wiring board, that has a low dielectric constant and low dielectric loss at a high-frequency region and has a thermal coefficient of expansion close to that of such chip components and printed-wiring board as a GaAs and can be surely mounted to them. SOLUTION: Glass (50-95 wt.%) for depositing diopside-type oxide crystal phase (DI) containing SiO2, Al2O3, MgO, SrO, and CaO, and quartz (5-50 wt.%) are formed and are baked at 800-1,000 deg.C as the dioposide-type oxide crystal phase (DI), porcelain that contains SiO2 crystal phase (Si) and has a thermal coefficient of expansion of 5.5 ppm/ deg.C or higher from room temperature to 400 deg.C, a permittivity of 7 or smaller, and a dielectric loss of 30×10-4 or less at 60-77 GHz is set to an insulation substrate 1, and a wiring substrate A for high frequency with a wiring layer 5 which composed by one type out of a strip line, a microstrip line, a coplanar line, and dielectric waveguide line is made. |
