发明名称 |
ION BEAM SPUTTERING APPARATUS, ION BEAM SPUTTERING METHOD, AND ION GUN |
摘要 |
PROBLEM TO BE SOLVED: To enable an ion gun to be stably operated for a long period of time by preventing the occurrence of abnormal discharge. SOLUTION: In the ion beam sputtering apparatus for depositing an insulating thin film on a substrate by irradiating a target with ion beams from an ion gun, a conductive target 31 is arranged at the position where a part of the ion beams are emitted, and a conductive film is deposited on a grid 22 of the ion gun 13 by particles sputtered out from the conductive target 31. Thick deposition of an insulating film on the grid 22 can be prevented, and charge-up of the insulating film can be suppressed. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007239031(A) |
申请公布日期 |
2007.09.20 |
申请号 |
JP20060063760 |
申请日期 |
2006.03.09 |
申请人 |
JAPAN AVIATION ELECTRONICS INDUSTRY LTD |
发明人 |
NISHIMOTO KEIJI |
分类号 |
C23C14/46;H01J27/16;H01J37/08;H01J37/317 |
主分类号 |
C23C14/46 |
代理机构 |
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代理人 |
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地址 |
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