Surface poisoning using ALD for high selectivity deposition of high aspect ratio features

摘要

Methods of selectively depositing a feature onto a substrate surface while maintaining substantially straight sidewalls on the feature. A portion of the feature is grown and then covered with a protective film. The protective film is removed from the top of the feature, leaving some of the film on the sides of the feature and the process is repeated to grow a feature of desired thickness.

主权项

1. A method of processing a substrate having a first material comprising a metal and a second material comprising a dielectric, the method comprising:
(a) depositing a third material on the first material and second material so that the third material grows selectively on the first material to form a feature having a top and at least one sidewall; (b) depositing a conformal film of a fourth material on the third material so that the top and the at least one sidewall of the feature have a layer of fourth material thereon; (c) selectively removing the fourth material from the top of the feature so that at least some of the fourth material remains on the sidewalls of the feature; and (d) repeating (a) through (c) to grow the feature to a predetermined thickness.