| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which ensures reduced development defects and a wide process window in pattern formation by immersion exposure, and to provide a pattern forming method using the same. <P>SOLUTION: The resist composition for immersion exposure comprises (A) a resin which has a glass transition temperature of 120-180°C and is decomposed by the action of an acid to increase rate of dissolution in an alkaline developer, (B) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (C) a solvent. The pattern forming method uses the same. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
