| 摘要 |
A method for forming a transistor of a semiconductor device, including the step of forming channel layers of a first and a second conductive types, performing high temperature thermal process to form stabilized channel layers and forming an epitaxial channel structure having a super-steep-retrograde delta-doped layer by growing undoped silicon epitaxial layers, treating the entire surface of the resulting structure with hydrogen, forming an epitaxial channel structure by growing undoped silicon epitaxial layers on the stabilized channel layers, forming gate insulating films and gate electrodes on the epitaxial channel structures, re-oxidizing the gate insulating films for repairing damaged portions of the gate insulating films; and forming a source/drain region and performing a low temperature thermal process.
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