SiC single crystal ingot and production method therefor

摘要

Provided are: a high-quality SiC single crystal ingot that suppresses the generation of inclusions; and a production method for said SiC single crystal ingot. The present invention pertains to a SiC single crystal ingot including a seed crystal substrate and a SiC growth crystal grown using the solution method and using the seed crystal substrate as the origin thereof, the growth crystal having a recessed crystal growth surface and not including inclusions.

主权项

1. A method for producing a SiC single crystal by a solution process in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to cause crystal growth of the SiC single crystal, the method comprising:
lowering the temperature of the Si—C solution at the outer peripheral section directly below the interface with the crystal growth plane to be lower than the temperature of the Si—C solution at the center section directly below the interface with the crystal growth plane, and causing the Si—C solution to flow from the center section directly below the interface with the crystal growth plane to the outer peripheral section directly below the interface with the crystal growth plane, wherein lowering the temperature of the Si—C solution comprises forming a meniscus between the seed crystal substrate and the Si—C solution by raising the seed crystal substrate and holding the seed crystal substrate at a position where a bottom face of the seed crystal substrate is higher than a liquid surface of the Si—C solution after the seed crystal substrate is contacted with the Si—C solution.