| 摘要 |
A semiconductor laser device and a method for manufacturing a semiconductor device are provided to protect a ridge from an outer shock generated during the manufacturing process of a semiconductor laser device by forming first and second protrusion units. A semiconductor laser device includes a first substance layer(120), a second substance layer(140), an active layer(160), a first electrode(170), a second electrode(180), a ridge(147), a dielectric layer(190), and a protrusion unit(200). The light is generated at the active layer interposed between substance layers. The protrusion unit(200) includes a first protrusion unit(200a) and a second protrusion unit(200b). The ridge is formed on the second substance layer(140) perpendicularly to the active layer(160). The first and the second protrusion units are formed to be higher than the ridge(147) with respect to the substrate(100). |
