发明名称 |
APPARATUS AND METHOD FOR CONTROLLING IMPLANT PROCESS |
摘要 |
An apparatus includes a beam scanner applying, during a non-uniform scanning mode, a plurality of different waveforms generating a scan of an ion beam along a scan direction, wherein a given waveform comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate; a current detector intercepting the ion beam outside of a substrate region and recording a measured integrated current of the ion beam for a given waveform; and a scan adjustment component coupled to the beam scanner and comprising logic to determine: when a beam width of the ion beam along the scan direction exceeds a threshold; and a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of waveforms. |
申请公布号 |
WO2016172061(A1) |
申请公布日期 |
2016.10.27 |
申请号 |
WO2016US28198 |
申请日期 |
2016.04.19 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
GAMMEL, George M.;EVANS, Morgan D.;TODOROV, Stanislav S.;HUSSEY, Norman E.;GIBILRAO, Gregory R. |
分类号 |
H01L21/265;H01J37/317 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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