| 摘要 |
PURPOSE: A CMP(chemical mechanical polishing) grinding agent generating an electric field is provided to promote regular grinding by forming a specific thickness of piezo-ceramic for generating an electric field by applying pressure to the outer circumference of grinding agent particles and then activating the polishing particles differently depending on pressure applied to high/low areas of a wafer. CONSTITUTION: To polish the surface of a wafer(10), polishing particles are supplied to a polishing pad(30) and the wafer rotates reversely together with the polishing pad. A part of the polishing particles is contacted to a high area(14) of the wafer and polished by a high pressure together with the polishing pad. A piezo-ceramic attached on the outer circumference of the polishing particles is activated as an active polishing particle(20a). Thereby, polishing efficiency is enhanced. On the contrary, the other polishing particles on a low area(12) of the wafer are influenced by a low pressure. The piezeo-ceramic thereof has a small active force as an inactive polishing particle(20b) so that the low area of the wafer is not polished. The high area of the wafer is polished efficiently while the low area is not. Therefore, the wafer is polished regularly.
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