METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which allows no increase in contact resistance value or no malfunction of a semiconductor device when forming a contact plug using a titanium nitride film containing water. SOLUTION: The contact plug consisting of a titanium film, the titanium nitride film containing water, and a tungsten film is formed in a through hole formed on a cobalt bisilicide layer. Thereafter, even if a silicon substrate is heat-treated at a temperature higher than the deposition temperature of the titanium nitride film, a stable contact with a low resistance can be formed since the titanium film is evenly formed between the cobalt bisilicide layer and the titanium nitride film.