| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory high in the reliability of a charge storage layer. <P>SOLUTION: Insulating films and electrode films 14 are alternately stacked on a silicon substrate 11, and a plurality of selection gate electrodes 17 extending in the X direction and a plurality of bit lines BL extending in the Y direction are provided thereon. Moreover, U-shaped silicon members 33 are provided each of which is constituted of a plurality of silicon pillars 31 passing through the electrode films 14 and the selection gate electrode 17 and having upper ends connected to the bit lines BL, and a connective member 32 connecting lower parts of one pair of the silicon pillars 31 disposed in diagonal positions. The electrode film 14 of each layer is divided for the respective selection gate electrodes 17. One pair of the silicon pillars 31 which are mutually connected through the connective member 32 are made to pass through the mutually different electrode films 14 and the mutually different selection gate electrodes 17. All of the U-shaped silicon members 33 connected commonly to one bit line BL are commonly connected to the other bit line BL. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
