SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first gate stack over the semiconductor substrate. The semiconductor device structure includes a second gate stack over the semiconductor substrate. The semiconductor device structure includes an erase gate between the first gate stack and the second gate stack. The erase gate has a recess recessed toward the semiconductor substrate. The semiconductor device structure includes a first word line adjacent to the first gate stack. The semiconductor device structure includes a second word line adjacent to the second gate stack.

主权项

1. A semiconductor device structure, comprising:
a semiconductor substrate; a first gate stack over the semiconductor substrate; a second gate stack over the semiconductor substrate; an erase gate between the first gate stack and the second gate stack, wherein the erase gate has a recess recessed toward the semiconductor substrate; a first word line adjacent to the first gate stack; a second word line adjacent to the second gate stack; a first spacer over a top surface of the erase gate; and a second spacer over the top surface of the erase gate, wherein the first spacer and the second spacer are separated from each other.