发明名称 |
NANOSTRUCTURED GAS SENSOR |
摘要 |
A thin film gas sensor device includes a substrate, a first pillar, a second pillar, a nanostructured thin film layer, and a first and a second electrical contact. The first and second pillars are supported by the substrate. The nanostructured thin film layer is formed with a semi- conductor material including holes. The semiconductor material is configured to undergo a reduction in a density of the holes in the presence of a target gas, thereby increasing an electrical resistance of the nanostructured thin film layer. The first and the second electrical contacts are operably connected to the nanostructured thin film layer, such that the increase in electrical resistance can be detected. |
申请公布号 |
WO2016109430(A1) |
申请公布日期 |
2016.07.07 |
申请号 |
WO2015US67678 |
申请日期 |
2015.12.28 |
申请人 |
ROBERT BOSCH GMBH;SAMARAO, ASHWIN, K.;O'BRIEN, GARY;FEYH, ANDO |
发明人 |
SAMARAO, ASHWIN, K.;O'BRIEN, GARY;FEYH, ANDO |
分类号 |
G01N27/12;G01N27/07;H01L29/78 |
主分类号 |
G01N27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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