| 摘要 |
<p>A method of fabricating capacitor electrodes in a stacked type of a dynamic random access memory (DRAM) is disclosed. This method of fabricating the capacitor electrodes of a storage capacitor in the semiconductor memory device having a memory cell comprising a MOS transistor and a storage capacitor includes the steps of forming a highly doped polysilicon film (10), patterning the highly doped polysilicon film in a predetermined shape, forming a lightly doped polysilicon film (11) so as to cover the surface of the highly doped polysilicon film having the predetermined shape, and anisotropically etching the lightly doped polysilicon film. A cylindrical capacitor electrode having a bottom portion (10a) in a stacked type of memory cell can be easily formed. By increasing the height of the cylindrical portion, the area of the electrodes (10a, 11a; 13) opposing with each other of the storage capacitor can be also easily increased. <IMAGE></p> |
