| 发明名称 |
Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication |
| 摘要 |
A method of fabricating a semiconductor device includes providing a semiconductor substrate, forming an oxide layer in the substrate, and adding nitrogen atoms on top of the exposed surface of the oxide film to form a diffusion barrier.
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| 申请公布号 |
US6800830(B2) |
申请公布日期 |
2004.10.05 |
| 申请号 |
US20010931595 |
申请日期 |
2001.08.16 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC, INC. |
发明人 |
MAHAWILI IMAD |
| 分类号 |
H01L21/283;H01L21/28;H01L21/314;H01L21/318;H01L29/51;H01L29/78;(IPC1-7):B23K10/00 |
主分类号 |
H01L21/283 |
| 代理机构 |
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代理人 |
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| 主权项 |
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