Aluminum nitride sintered body, member for semiconductor manufacturing device, and method of manufacturing aluminum nitride sintered body

摘要

A conductive channel formed of an (Sm, Ce)Al₁₁O₁₈ is interconnected in the grain boundaries of aluminum nitride (AlN) particles, thereby reducing temperature dependency of volume resistivity of AlN sintered body; at the same time, the solid solution of the AlN particles is formed with at least one of C and Mg, to prevent the conductive channel from moving in AlN particles, thereby maintaining the volume resistivity within AlN particles at a high value even at a high temperature.