发明名称 |
VERTICAL FIN eDRAM |
摘要 |
Systems and methods of forming semiconductor devices. A trench capacitor comprising deep trenches is formed in an n+ type substrate. The deep trenches have a lower portion partially filled with a trench conductor surrounded by a storage dielectric. A polysilicon growth is formed in an upper portion of the deep trenches. The semiconductor device includes a single-crystal semiconductor having an angled seam separating a portion of the polysilicon growth from an exposed edge of the deep trenches. A word-line is wrapped around the single-crystal semiconductor. A bit-line overlays the single-crystal semiconductor. |
申请公布号 |
US2016163712(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201414561999 |
申请日期 |
2014.12.05 |
申请人 |
International Business Machines Corporation |
发明人 |
Anderson Brent A.;Barth, JR. John E.;Nowak Edward J. |
分类号 |
H01L27/108;H01L21/768;H01L21/306;H01L27/12;H01L21/02 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a trench capacitor comprising deep trenches formed in a n+ type substrate, said deep trenches having a lower portion partially filled with a trench conductor surrounded by a storage dielectric; a polysilicon growth formed in an upper portion of said deep trenches; a single-crystal semiconductor having a seam separating a portion of said polysilicon growth from an exposed edge of said deep trenches, said seam being at an acute angle from said exposed edge; a word-line wrapped around said single-crystal semiconductor; and a bit-line overlaying said single-crystal semiconductor. |
地址 |
Armonk NY US |