| 发明名称 |
METHOD FOR PRODUCING METAL OXIDE FILM AND METHOD FOR PRODUCING TRANSISTOR |
| 摘要 |
Provided is a technology for efficiently obtaining a metal oxide film having good adhesiveness. A method of producing a metal oxide film includes: an application step of applying a solution containing an organic metal complex onto a substrate; an ozone exposure step of exposing the resultant coating film to ozone; and a heating step of heating the coating film. |
| 申请公布号 |
US2016163538(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201615009248 |
申请日期 |
2016.01.28 |
| 申请人 |
NIKON CORPORATION |
发明人 |
NAKAZUMI Makoto;Nishi Yasutaka |
| 分类号 |
H01L21/02;H01L29/66;C01F7/02;H01L21/28 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of producing a metal oxide film, the method comprising:
an application step of applying a solution containing an organic metal complex onto a substrate; an ozone exposure step of exposing the resultant coating film to ozone; and a heating step of heating the coating film. |
| 地址 |
Tokyo JP |
