| 发明名称 |
Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device |
| 摘要 |
A semiconductor layer consisting of Ga1-xInx NyAs1-y and/or GaNyAs1-y and formed by incorporating nitrogen into a group III-V mixed crystal semiconductor is provided on a GaAs substrate. The hydrogen concentration in the semiconductor is kept at 5x1018 atoms/cm3 or below.
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| 申请公布号 |
US6150677(A) |
申请公布日期 |
2000.11.21 |
| 申请号 |
US19990252124 |
申请日期 |
1999.02.18 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TANAKA, SO;MOTO, AKIHIRO;TANABE, TATSUYA;IKOMA, NOBUYUKI |
| 分类号 |
H01L31/0304;H01L31/12;H01L31/18;H01L33/00;H01L33/32;(IPC1-7):H01L31/030 |
主分类号 |
H01L31/0304 |
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