发明名称 |
METHOD FOR MANUFACTURING SUBSTRATE FOR PHOTOELECTRIC CONVERSION ELEMENT |
摘要 |
A silicon layer (10B) having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate (100) and hydrogen ions are implanted to a predetermined depth (L) into the surface region of the silicon substrate (100) through the silicon layer (10B) to form a hydrogen ion-implanted layer (11). Then, an n-type germanium-based crystal layer (20A) whose conductivity type is opposite to that of the silicon layer (10B) and a p-type germanium-based crystal layer (20B) whose conductivity type is opposite to that of the germanium-based crystal layer (20A) are successively vapor-phase grown to provide a germanium-based crystal (20). The surface of the germanium-based crystal layer (20B) and the surface of the supporting substrate (30) are bonded together. In this state, impact is applied externally to separate a silicon crystal (10) from the silicon substrate (100) along the hydrogen ion-implanted layer (11), thereby transferring (peeling off) a laminated structure composed of the germanium-based crystal (20) and the silicon crystal (10) onto the supporting substrate (30). |
申请公布号 |
EP1995788(B1) |
申请公布日期 |
2016.10.19 |
申请号 |
EP20070738265 |
申请日期 |
2007.03.12 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
AKIYAMA, SHOJI;KUBOTA, YOSHIHIRO;ITO, ATSUO;KAWAI, MAKOTO;TOBISAKA, YUUJI;TANAKA, KOICHI |
分类号 |
H01L31/04;H01L21/02;H01L21/20;H01L21/205;H01L31/0687 |
主分类号 |
H01L31/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|