发明名称 |
Method of forming upper electrode of nanowire array |
摘要 |
Provided are a method of forming an upper electrode of a nanowire array and a nanowire array having an upper electrode formed thereon. The method includes a step of placing a polymeric thin film layer, a step of pressing, a step of treating a mixed solution, a step of etching, and a step of depositing an electrode material, such that the upper electrode is reliably formed in a state in which the polymeric thin film layer is formed on a portion of the nanowire, thereby making it possible to implement various nano-devices based on the nanowire array aligned on a substrate having a large area. |
申请公布号 |
US9520211(B2) |
申请公布日期 |
2016.12.13 |
申请号 |
US201214386863 |
申请日期 |
2012.12.21 |
申请人 |
KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE |
发明人 |
Lee Woo;Han Hee |
分类号 |
H01R43/16;H01B13/00;B82Y10/00;H01L29/06;H01L29/16;H01B1/02;B82Y20/00;B82Y40/00;H01L29/417 |
主分类号 |
H01R43/16 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP |
主权项 |
1. A method of forming an upper electrode of a nanowire array in which a plurality of nanowires are arranged on a substrate having a plate shape, the method comprising:
a step of placing a polymeric thin film layer (S10), heating the nanowire array and placing a polymeric thin film layer on the heated nanowire array; a step of pressing (S20), applying pressure to the polymeric thin film layer placed on the nanowire array in the step of placing the polymeric thin film layer (S10); a step of treating a mixed solution (S30), dipping the nanowire array having the polymeric thin film layer pressed thereon in the mixed solution and removing a portion of the polymeric thin film layer; a step of etching (S40), etching the polymeric thin film layer so that a portion of the nanowires passes through the polymeric thin film layer and is exposed to the outside; and a step of depositing an electrode material (S50), depositing an electrode material on the nanowire exposed to the outside in the step of etching (S40). |
地址 |
KR |