Method of producing MOS devices.

摘要

In a method of manufacturing a MOS device, of the type wherein an electrode film is deposited on a gate oxide film, after which a plurality of heat-treating steps are carried out in ambient gases and at a temperature range between 800 and 1100 DEG C, at least one of the heat-treating steps is carried out in a hydrogen atmosphere. The resultant MOS device has improved a time-dependent dielectric breakdown characteristics and maintained an improved time-zero dielectric breakdown characteristics which is comparable to that provided by the conventional hydrogen annealing.