Method and device for fabricating a layer in semiconductor material

摘要

The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method.

主权项

1. A method for fabricating a substrate comprising a semiconductor material, the method comprising:
providing a donor substrate comprising a first semiconductor material at an initial temperature, the donor substrate having a weakened zone therein defining a layer to be transferred from the donor substrate to another substrate between the weakened zone and a surface of the donor substrate; contacting the surface of the donor substrate with a second semiconductor material in a liquid state in a bath at a temperature higher than the initial temperature of the donor substrate, the second semiconductor material having a melting point equal to or lower than a melting point of the first semiconductor material; and solidifying the bath material on the surface to thicken the donor substrate with a solidified layer.