发明名称 Semiconductor memory device
摘要 A semiconductor memory device uses memory cells, which have structures not increasing areas, and are arranged in a distinctive manner providing high data holding stability.A semiconductor memory device includes memory cells formed on a main surface of a semiconductor substrate, and each having first and second transistors each having a gate electrode and impurity regions forming source/drain as well as one capacitor; and bit and word lines for controlling an operation of the memory cells, a cell plate forming an electrode of the capacitor being formed of the same layer as the gate electrode.
申请公布号 US6845035(B2) 申请公布日期 2005.01.18
申请号 US20030678142 申请日期 2003.10.06
申请人 RENESAS TECHNOLOGY CORP. 发明人 OOISHI TSUKASA
分类号 G11C5/06;G11C11/401;G11C11/403;G11C11/404;G11C11/405;G11C11/406;G11C11/4097;H01L21/8242;H01L27/108;(IPC1-7):G11C11/24 主分类号 G11C5/06
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