| 摘要 |
The invention provides a wiring forming method and an etching solution for wiring formation. In manufacture method provided in the invention, the metal oxide layer with a conductor pattern including a copper layer is contacted to the etching solution, the metal oxide layer is etched by the etching solution, and thereby the wiring of the patterned metal oxide layer and the copper layer is formed. The metal oxide layer includes more than one metal oxide selected from the metal oxides of zinc, aluminum, tin, indium and gallium. The etching solution is an acid solution containing thiocarbonyl compounds and halide ions. |
