发明名称 |
Method of increasing MEMS enclosure pressure using outgassing material |
摘要 |
Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing. |
申请公布号 |
US9452925(B2) |
申请公布日期 |
2016.09.27 |
申请号 |
US201514832786 |
申请日期 |
2015.08.21 |
申请人 |
InvenSense, Inc. |
发明人 |
Zhang Cerina;Lim Martin;Shin Jongwoo;Seeger Joseph |
分类号 |
H01L23/02;H01L21/54;B81C1/00;B81B7/02 |
主分类号 |
H01L23/02 |
代理机构 |
Sterne, Kessler, Goldstein & Fox P.L.L.C. |
代理人 |
Sterne, Kessler, Goldstein & Fox P.L.L.C. |
主权项 |
1. A manufacturing method, comprising:
providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer, the second passivation layer having a top surface; forming an opening in a first portion of the second passivation layer, the opening exposing a portion of a surface of the first passivation layer; patterning the second and first passivation layers to expose portions of the patterned top-level metal layer; and bonding a second substrate and the first substrate to each other; wherein the bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing. |
地址 |
Sunnyvale CA US |