Semiconductor device

摘要

To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.

主权项

1. A semiconductor device comprising:
a substrate; a gate electrode and a line over the substrate, in non-overlapping regions; a first insulating film over the substrate, the gate electrode, and the line; a second insulating film over the first insulating film; a third insulating film over the second insulating film; a light-transmitting pixel electrode over the third insulating film; a transistor comprising:
the gate electrode;the first insulating film over the gate electrode; anda semiconductor film over the first insulating film and overlapping the gate electrode, the semiconductor film being electrically connected to the pixel electrode; and a capacitor comprising:
a light-transmitting film able to conduct electricity as a first capacitor electrode over the first insulating film;the third insulating film as a capacitor dielectric film over the first capacitor electrode; andthe pixel electrode as a second capacitor electrode over the capacitor dielectric film, wherein the first, the second, and the third insulating films overlap with the semiconductor film, wherein a stack comprising the first insulating film, the second insulating film, and the third insulating film is interposed between the line and the pixel electrode, and wherein the second insulating film is not provided in a region entirely overlapping with the first and the second capacitor electrodes, and the third insulating film is on and in direct contact with the first capacitor electrode.