| 发明名称 | Electrode-aligned selective epitaxy method for vertical power devices | ||
| 摘要 | A method of forming trench electrode structures includes forming a first dielectric layer on a semiconductor substrate, forming a second layer above the first dielectric layer and forming an opening which extends through the second layer and the first dielectric layer to the semiconductor substrate such that part of the semiconductor substrate is uncovered. The method further comprises forming an epitaxial layer on the uncovered part of the semiconductor substrate, removing the second layer after forming the epitaxial layer and filling an open space formed by removing the second layer with an electrically conductive material. The electrically conductive material forms an electrode which is laterally surrounded by the epitaxial layer. | ||
| 申请公布号 | US9478639(B2) | 申请公布日期 | 2016.10.25 |
| 申请号 | US201514633359 | 申请日期 | 2015.02.27 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Jin Minghao;Blank Oliver;Rothmaler Rudolf;Baumgartl Johannes |
| 分类号 | H01L21/00;H01L29/66;H01L21/02;H01L29/49 | 主分类号 | H01L21/00 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A method of forming trench electrode structures, the method comprising: forming a first dielectric layer on a semiconductor substrate; forming a second layer above the first dielectric layer; forming an opening which extends through the second layer and the first dielectric layer to the semiconductor substrate such that part of the semiconductor substrate is uncovered; forming an epitaxial layer on the uncovered part of the semiconductor substrate; removing the second layer after forming the epitaxial layer; and filling an open space formed by removing the second layer with an electrically conductive material, the electrically conductive material forming an electrode which is laterally surrounded by the epitaxial layer. | ||
| 地址 | Villach AT | ||