发明名称 |
Method and apparatus for heating semiconductor wafers |
摘要 |
A system and method for evenly heating semiconductor wafers in a horizontal elongated reaction tube, wherein a furnace surrounding only a part of the length of the reaction tube is caused to move so as to pass along each wafer placed in the reaction tube. The system is especially useful for processing wafers at high temperatures for a short period of time.
|
申请公布号 |
US4449037(A) |
申请公布日期 |
1984.05.15 |
申请号 |
US19820378261 |
申请日期 |
1982.05.14 |
申请人 |
FUJITSU LIMITED |
发明人 |
SHIBAMATA, YOSHIYUKI;ONODERA, HIDEO;KIRISEKO, TADASHI |
分类号 |
H01L21/31;C30B25/10;C30B31/12;C30B33/00;H01L21/22;(IPC1-7):F27B9/06;C23C13/08 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|