发明名称 |
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+ , Sm3+, Eu3+, Dy3+, Er3+ and Tb3+ is excited with GaN-based compound laser diode |
摘要 |
A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho<3+>, Sm<3+>, Eu<3+>, Dy<3+>, Er<3+>, and Tb<3+> so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from <5>S2 to <5>I7, from <5>S2 to <5>I8, from <4>G5/2 to <6>H5/2, from <4>G5/2 to <6>H7/2, from <4>F3/2 to <6>H11/2, from <5>D0 to <7>F2, from <4>F9/2 to <6>H13/2, from <4>F9/2 to <6>H11/2, from <4>S3/2 to <4>I15/2, from <2>H9/2 to <4>I13/2, and from <5>D4 to <7>F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.
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