发明名称 CMOS image sensor structure with crosstalk improvement
摘要 A semiconductor device includes a substrate, a semiconductor layer, light-sensing devices, a transparent dielectric layer and a grid shielding layer. The semiconductor layer overlies the substrate, and has a first surface and a second surface opposite to the first surface. The semiconductor layer includes microstructures disposed on the second surface of the semiconductor layer. The light-sensing devices are disposed on the first surface of the semiconductor layer. The transparent dielectric layer is disposed on the second surface of the semiconductor layer, and covers the microstructures. The grid shielding layer extends from the first surface of the semiconductor layer toward the second surface of the semiconductor layer, and surrounds each of the light-sensing devices to separate the light-sensing devices from each other, in which a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer.
申请公布号 US9397130(B1) 申请公布日期 2016.07.19
申请号 US201414583406 申请日期 2014.12.26
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 Huang Chien-Chang;Lin Hsing-Chih;Tu Chien-Nan;Yeh Yu-Lung
分类号 H01L27/146 主分类号 H01L27/146
代理机构 Maschoff Brennan 代理人 Maschoff Brennan
主权项 1. A method for manufacturing a semiconductor device, the method comprising: providing a first substrate on which a semiconductor layer is formed on a surface of the first substrate, the semiconductor layer having a first surface and a second surface opposite to the first surface; forming a plurality of microstructures on the second surface; forming a transparent dielectric layer on the second surface and covering the microstructures; bonding a second substrate to the transparent dielectric layer; removing the first substrate to expose the first surface; forming a grid shielding layer extending from the first surface toward the second surface to define the semiconductor layer into a plurality of pixel regions, wherein the grid shielding layer surrounds each of the pixel regions to separate the pixel regions from each other, and a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer; and forming a plurality of light-sensing devices respectively on the first surface in the pixel regions.
地址 Hsinchu TW