发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To accelerate an operation by connecting a load circuit to permit a current of constant level to flow to a reference circuit. CONSTITUTION:The load circuit attached on the reference circuit is equipped with a memory cell 4 interposed between a transistor 3 and a memory cell MOR at the most upstream side, and memory cells 5, 6 arranged in series between the common node of the transistor 3 and the memory cell 4 and the ground potential. A power source potential VCC is applied to the gates of the memory cells 4-6 as constant potential. Therefore, a reference current of constant level can be always supplied to a sense amplifier, which accelerates decision for the inversion level of the sense amplifier. In such a way, the operation can be accelerated.</p>
申请公布号 JPH0411395(A) 申请公布日期 1992.01.16
申请号 JP19900112409 申请日期 1990.04.27
申请人 NEC CORP 发明人 WATANABE KAZUCHIKA
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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