METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce a leakage current of a memory cell by implanting a dopant ion in a channel region. CONSTITUTION: An isolation region is formed on a semiconductor substrate(11) to define an active region. The first well(12) is formed by implanting the first dopant ion. The second well(14) is formed by implanting the second type dopant ion within the first well(12). The third well(16) is formed by implanting the first dopant ion within a part of the second well(14). A gate including a gate oxide layer(17) and a gate electrode(18) is patterned on an upper portion of the semiconductor substrate(11). A source/drain region(19) is formed by implanting the second conductive type dopant ion within the first well(12) and the third well(14).