发明名称 |
Thin channel-on-insulator MOSFET device with n+ epitaxy substrate and embedded stressor |
摘要 |
A method of forming a field effect transistor (FET) device includes forming a recess in a PFET region of a starting semiconductor substrate comprising a bulk semiconductor layer an epitaxial n+ layer formed on the bulk semiconductor layer, a buried insulator (BOX) layer formed on the epitaxial n+ layer, and an active semiconductor or silicon-on-insulator (SOI) layer formed on the BOX layer, the recess being formed completely through the SOI layer, the BOX layer, and partially into the epitaxial n+ layer; epitaxially growing a silicon germanium (SiGe) transition layer on the epitaxial n+ layer, the SiGe transition layer having a lower dopant concentration than the epitaxial n+ layer; and epitaxially growing embedded source/drain (S/D) regions on the SiGe transition layer and adjacent the SOI layer in the PFET region, the embedded S/D regions comprising p-type doped SiGe. |
申请公布号 |
US9373639(B2) |
申请公布日期 |
2016.06.21 |
申请号 |
US201514697082 |
申请日期 |
2015.04.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Doris Bruce B.;Khakifirooz Ali;Reznicek Alexander |
分类号 |
H01L29/00;H01L27/12;H01L21/84;H01L29/08;H01L29/06;H01L29/161;H01L29/78;H01L21/02;H01L21/8238;H01L27/092;H01L27/108 |
主分类号 |
H01L29/00 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP ;Alexanian Vazken |
主权项 |
1. A field effect transistor (FET) device, comprising:
a semiconductor substrate comprising a bulk semiconductor layer, an epitaxial n+ layer formed on and in direct contact with the bulk semiconductor layer, a buried insulator (BOX) layer formed on the epitaxial n+ layer, and an active semiconductor or silicon-on-insulator (SOI) layer formed on the BOX layer; an epitaxial silicon germanium (SiGe) transition layer arranged in direct contact with the BOX layer and in direct contact with the epitaxial n+ layer in a PFET region of the semiconductor substrate, the SiGe transition layer having a lower dopant concentration than the epitaxial n+ layer; and embedded source/drain (S/D) regions epitaxially grown on the SiGe transition layer and adjacent the SOI layer in the PFET region, the embedded S/D regions comprising p-type doped SiGe. |
地址 |
Armonk NY US |