| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser arranged such that the shift of refractive index can be corrected when epitaxial growth is carried out under a state having irregularities on the surface. <P>SOLUTION: The semiconductor laser has a semiconductor laser element composed of a compound semiconductor containing at least Al and In in which at least p-type clad layers 8 and 6, an active layer 4 and an n-type clad layer 2 are formed wherein Al composition of at least a part of the p-type clad layers 8 and 6 is larger than Al composition of the n-type clad layer 2 or Al composition of at least a part of the n-type clad layer 2 is smaller than Al composition of the p-type clad layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
