METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve a step coverage by leaving a predetermined pattern even in a portion where a cell is not to be formed by using a dummy pattern. CONSTITUTION: After an interlayer dielectric is deposited on a semiconductor substrate having a semiconductor device, an insulating layer corresponding to a portion where a capacitor is to be formed, is etched. A conductive layer as a storage electrode(102) is deposited and a photoresist layer(103) is evaporated on the storage electrode. The conductive layer is etched by forming a pattern so that a part of the photoresist layer is left in a portion where a cell is not to be formed. An upper portion of the conductive layer is eliminated by a chemical mechanical polishing(CMP) method.