发明名称 |
Phosphoric acid free process for polysilicon gate definition |
摘要 |
A method of defining a patterned, conductive gate structure for a MOSFET device on a semiconductor substrate includes forming a conductive layer over the semiconductor substrate and forming a capping insulator layer over the conductive layer. An anti-reflective coating (ARC) layer is formed over the capping insulator layer and a patterned photoresist shape is formed on the ARC layer. A first etch procedure using the photoresist shape as an etch mask defines a stack comprised of an ARC shape and a capping insulator shape. A second etch procedure using the stack as an etch mask defines the patterned, conductive gate structure in the conductive layer.
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申请公布号 |
US7307009(B2) |
申请公布日期 |
2007.12.11 |
申请号 |
US20040999270 |
申请日期 |
2004.11.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN LI-TE S.;CHEN FANG-CHENG;LIN HUIN-JER;CHIU YUAN-HUNG;TAO HUN-JAN |
分类号 |
H01L21/00;H01L21/302;H01L21/311;H01L21/3213;H01L21/336;H01L21/4763;H01L21/8234;H01L29/40 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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