发明名称 |
Integrated passive device substrate |
摘要 |
The specification describes an integrated passive device (IPD) that is formed on a silicon substrate (51) covered with an oxide layer (52). Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer. |
申请公布号 |
EP1835536(A2) |
申请公布日期 |
2007.09.19 |
申请号 |
EP20070250982 |
申请日期 |
2007.03.09 |
申请人 |
SYCHIP INC. |
发明人 |
DEGANI, YINON;FAN, YU;GAO, CHARLEY CHUNLEI;LAU, MAUREEN;SUN, KUNQUAN;SUN, LINGUO |
分类号 |
H01L21/84;H01L21/02;H01L21/70;H01L21/762;H01L23/66;H01L27/01;H01L27/06;H01L27/13 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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